This study presents a qualitative model for understanding how irradiation impacts the electrical conductivity of semiconductors. When exposed to high-energy particles, semiconductors like silicon develop unique properties due to radiation-induced defects, forming nano-sized disordered regions that are highly conductive compared to the surrounding matrix. These regions create elastic stresses and clusters of radiation defects, influencing the material's effective Hall mobility. Notably, under specific conditions, these disordered zones transform from conductive to dielectric, causing variations in conductivity and carrier mobility.
The model's findings provide insights into the behavior of irradiated semiconductors and suggest practical implications for microelectronics and nanotechnology, particularly in environments with high radiation exposure. This research could guide the development of advanced semiconductor devices with improved resilience in radiation-heavy settings.
🔗 Full Text: https://www.igminresearch.com/articles/html/igmin166
🔗 DOI Link: https://dx.doi.org/10.61927/igmin166
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